Measurement and model of the infrared two-photon emission spectrum of GaAs.
نویسندگان
چکیده
Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.
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ورودعنوان ژورنال:
- Physical review letters
دوره 103 2 شماره
صفحات -
تاریخ انتشار 2009